Ordering and Disordering in Alloys by Robert W. Cahn (auth.), A. R. Yavari (eds.) PDF

By Robert W. Cahn (auth.), A. R. Yavari (eds.)

Proceedings of the ecu Workshop on Ordering and Disordering held in Grenoble, France, 10-12 July 1991.

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After or enhanced during due to managed this high like method looking is the energy particle irradiation produced 48 RELATION BETWEEN LONG-RANGE ORDER AND ELECTRICAL RESISTIVITY Whereas SRO will affect the electrical resistivity just scattering of conduction electrons it is known that LRO contribute by superlattice Bragg scattering, which by in (diffuse) addition changes the will effective • by Brillouin zone number of conduction electrons neff (and maybe their effective mass m) forming new energy gaps in the Fermi surface at the boundaries of the superlattice [1].

This is roughly consistent with the experimental velocities. We had expected that solidification of thin films on Si02 would occur more slowly than on bulk samples, resulting in a more highly ordered solid. However, it is possible that the thin film samples undercooled significantly prior to solidification in the absence of a crystal seed, and then grew very rapidly once nucleation occurred. There might have been some amount of lateral growth of crystalline nuclei, this would prevent us from interpreting the transient conductance measurement in terms of an interface velocity.

The assumptions about how the local chemical environment affects the probability of a vacancy jump are the same as in the analytical theories [3-7,10,12,17], but the Monte Carlo simulations are exact for a periodic crystal of finite size. Presented in Fig. 1 is a kinetic path obtained with a Monte Carlo simulation of ordering with vacancies. 77 of the critical temperature. Monte Carlo simulations permit a more physical transition from SRO to LRO because they include correlations over intermediate distances.

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