By S. T. Picraux (auth.), Dr. Ram Kossowsky, Dr. Subhash C. Singhal (eds.)
Over the previous couple of years there was expanding want for systematic and straregically designed experiments of floor morphology evolution ensuing shape ion bombardment prompted sputtering. even though there's a magnificent variety of investi gations {1} desirous about semiconductor fabrics due to instant functions, the main systematic investigations were performed with fcc metals with specific curiosity on unmarried crystal Cu {2,3}. proof now exists that inside of definite para meters (i. e ion species (Ar+), ion power (20-44 KeV), substrate 2 temperature (80-550° K), dose cost (100-500 gA cm- ) , residual x five nine strain (5 10- to 5x10- mm Hg) and polar and azimuthal attitude of ion occurrence {4} reproducible floor morphology (etch pits and pyramids) is completed at the (11 three 1) particular crystallographic orientation. The temporal improvement of person floor positive factors used to be alsoobserved during this laterstudy {4}, through using an in situ ion resource within the scanning electron microscope at Salford, a strategy additionally empolyed in stories of the impression of polar perspective of ion occurrence {5} and floor contaminants {6} at the topographyof Ar+ bombarded Si. experiences have additionally been made at the edition of incident ion species with the (11 three 1) Cu floor and it used to be totally well-known {7} that residual floor contaminants whilst current may possibly playa significant function in dictating the morhological evolution.
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Example text
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81. W. -Yohnson in ref. 45, p. 73. 32 RECOIL IMPLANTATION AND ION MIXING J. P. G/LETI/LIR 85 X 38041 Grenoble Cedex FRANCE 1 - INTRODUCTION Recoil implantation and ion mixing are phenomenons related to ion implantation into a substrate covered with a thin layer, typically a few hundred Angstroems thick, of another material. The implanted ions knock some atoms out of the layer into the substrate where, in their turn, they are implanted. This technique has been called recoil implantation. We will reserve the name of ion beam mixing to the case where some sort of reaction, such as formation of a compound at the interface between the substrate and the layer is induced by the bombardment.
